to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2sc5345 transistor (npn) features z high current transition frequency z low output capacitance z low base time constant and high gain z excellent noise response applications z rf amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.01ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =5ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 4 v collector cut-off current i cbo v cb =30v,i e =0 0.5 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a dc current gain h fe(1) v ce =6v, i c =1ma 40 240 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.3 v collector output capacitance c ob v cb =6v,i e =0, f=1mhz 1.4 pf transition frequency f t v ce =6v,i c =1ma 550 mhz classification of h fe rank r o y range 40-80 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 20 ma p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
0.5 1.0 1.5 2.0 2.5 3.0 10 100 1000 0.1 1 10 200 400 600 800 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 0.1 1 10 10 100 0.1 1 10 10 100 1000 0.1 1 10 0.1 1 10 200 400 600 800 1000 0.1 1 10 0246810 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2000 20 i c f t ?? common emitter v ce = 6 v t a =25 collector current i c (ma) transition frequency f t (mhz) 20 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 20 20 t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 200 2sc5345 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 6v 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =6v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 20ua 18ua 16ua 14ua 12ua 10ua 4ua 6ua 8ua i b =2ua 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
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